Theory of Strain Relaxation for Epitaxial Layers Grown on Substrate of a Finite Dimension
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.85.784/fulltext
Reference11 articles.
1. Defects in epitaxial multilayers
2. New approach to the high quality epitaxial growth of lattice‐mismatched materials
3. New approach to the growth of low dislocation relaxed SiGe material
4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
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