Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Isotopic Control of the Boron-Vacancy Spin Defect in Hexagonal Boron Nitride

Published:2023-09-21 Issue:12 Volume:131 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Clua-Provost T.,Durand A.,Mu Z.,Rastoin T.,Fraunié J.^ORCID,Janzen E.,Schutte H.,Edgar J. H.^ORCID,Seine G.^ORCID,Claverie A.^ORCID,Marie X.,Robert C.,Gil B.,Cassabois G.^ORCID,Jacques V.^ORCID

Funder

Agence Nationale de la Recherche

Office of Naval Research

Institute for Quantum Technologies in Occitanie

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.131.126901/fulltext

Reference36 articles.

1. Quantum sensing and imaging with spin defects in hexagonal boron nitride

2. Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

3. Optically Active Spin Defects in Few-Layer Thick Hexagonal Boron Nitride

4. Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

5. Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride

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