Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Strain Quantum Sensing with Spin Defects in Hexagonal Boron Nitride

Published:2022-08-12 Issue:16 Volume:22 Page:6553-6559
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Lyu Xiaodan¹²,Tan Qinghai¹^ORCID,Wu Lishu¹^ORCID,Zhang Chusheng¹,Zhang Zhaowei¹^ORCID,Mu Zhao¹,Zúñiga-Pérez Jesús¹³,Cai Hongbing¹,Gao Weibo¹²⁴^ORCID

Affiliation:

1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore

2. The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, 637371, Singapore

3. MajuLab, International Research Laboratory IRL 3654, CNRS, Université Côte d’Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, 637371, Singapore

4. Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, 117543, Singapore

Funder

Ministry of Education - Singapore

National Research Foundation Singapore

Agency for Science, Technology and Research (A*STAR)

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.2c01722

Reference42 articles.

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5. Self-Protected Thermometry with Infrared Photons and Defect Spins in Silicon Carbide

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