Ordering Mechanisms in Epitaxial SiGe Nanoislands
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.108.176102/fulltext
Reference37 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Strain-Driven Alloying in Ge/Si(100) Coherent Islands
3. Monte Carlo studies of stress fields and intermixing in Ge/Si(100) quantum dots
4. Physical origin of trench formation in Ge∕Si(100) islands
5. Critical aspects of alloying and stress relaxation inGe∕Si(100)islands
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2. Temperature evolution of defects and atomic ordering in Si1−xGex islands on Si(001);Journal of Applied Physics;2016-02-28
3. Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands;Applied Physics Letters;2015-01-05
4. Si/Ge intermixing during Ge Stranski–Krastanov growth;Beilstein Journal of Nanotechnology;2014-12-09
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