Monte Carlo studies of stress fields and intermixing in Ge/Si(100) quantum dots
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.205307/fulltext
Reference26 articles.
1. Quantum-dot lasers
2. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)
3. Shape transition in growth of strained islands: Spontaneous formation of quantum wires
4. Competing relaxation mechanisms in strained layers
5. Self-assembled island formation in heteroepitaxial growth
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1. Study of intermixing effects in Ge/Si(001) growth using kinetic Monte Carlo simulations;Journal of Crystal Growth;2022-04
2. Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands;Applied Physics Letters;2015-01-05
3. Si/Ge intermixing during Ge Stranski–Krastanov growth;Beilstein Journal of Nanotechnology;2014-12-09
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