Observation of Transitions between Electronic States at the (111)AFace of CdTe by Electrolyte Electroreflectance
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.55.1323/fulltext
Reference12 articles.
1. Vacancy-Buckling Model for the (2×2) GaAs(111) Surface
2. Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs
3. Characterization of CdxHg1-xTe p-type layers grown by MBE
4. Comparative Study of Defects in Semiconductors by Electrolyte Electroreflectance and Spectroscopic Ellipsometry
5. Third-derivative modulation spectroscopy with low-field electroreflectance
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1. Fourier critical point analysis: extension to Gaussian lineshapes;Solar Energy Materials and Solar Cells;1994-04
2. Determination of accurate critical-point energies, linewidths and line shapes from spectroscopic ellipsometry data;Thin Solid Films;1993-10
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