DASteps and 2D Islands of Double Layer Height in the SiGe(001) System
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.84.107/fulltext
Reference12 articles.
1. Observations of strain effects on the Si(001) surface using scanning tunneling microscopy
2. Finite-temperature phase diagram of vicinal Si(100) surfaces
3. Stabilities of single-layer and bilayer steps on Si(001) surfaces
4. Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain
5. Ge-Induced Reversal of Surface Stress Anisotropy on Si(001)
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1. Strain release management in SiGe/Si films by substrate patterning;Applied Physics Letters;2014-12-15
2. Energetics of adsorbed hydrogen and surface germanium on steppedSixGe1−x(100)−(2×1)surfaces;Physical Review B;2008-05-08
3. Stress Metrology : The challenge for the next generation of engineered wafers;MRS Proceedings;2004
4. Dimers at Ge/Si(001) surfaces: Ge coverage dependent quenching, reactivation of flip-flop motion, and interaction with dimer vacancy lines;Physical Review B;2002-10-29
5. Interlayer atomic diffusion as the reason for self-assembled quantum dot formation;Computer Physics Communications;2002-08
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