One-dimensional ‘‘dislocation-related’’ electronic states at the GaAs(110)-Bi(1×1) interface
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.68.986/fulltext
Reference29 articles.
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1. Bi ordered phases on Cu(100): Periodic arrays of dislocations influence the electronic properties;The Journal of Chemical Physics;2010-05-07
2. A high-resolution photoemission study of confined metal systems on InAs(110);Surface Science;2000-05
3. A high-resolution spectroscopy study on bidimensional ordered structures: the (1 × 1) and (1 × 2) phases of Bi/InAs(110);Journal of Physics: Condensed Matter;1999-09-16
4. Optical properties of bismuth-terminatedGaAs(110) surfaces;Il Nuovo Cimento D;1998-07
5. Surface modification of InAs(110) surface by low energy ion sputtering;Surface Science;1997-11
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