New Type of Charged Defect in Amorphous Chalcogenides-Reference-Cited by-同舟云学术

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New Type of Charged Defect in Amorphous Chalcogenides

Published:2005-03-02 Issue:8 Volume:94 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Simdyankin S. I.,Niehaus T. A.,Natarajan G.,Frauenheim Th.,Elliott S. R.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.94.086401/fulltext

Reference14 articles.

1. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors

2. Atomistic simulations of complex materials: ground-state and excited-state properties

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1. Mechanisms of the photodarkening in chalcogenide glasses: Strains or defects?;Journal of Non-Crystalline Solids;2023-12

2. Hypervalency in amorphous chalcogenides;Nature Communications;2022-03-18

3. Electronic Properties;Amorphous Chalcogenide Semiconductors and Related Materials;2021

4. Reversible laser-assisted structural modification of the surface of As-rich nanolayers for active photonics media;Applied Surface Science;2020-07

5. Signature of Coordination Defects in the Vibrational Spectrum of Amorphous Chalcogenides;Frontiers in Materials;2019-11-12

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