Atomistic simulations of complex materials: ground-state and excited-state properties-Reference-Cited by-同舟云学术

Atomistic simulations of complex materials: ground-state and excited-state properties

Published:2002-03-08 Issue:11 Volume:14 Page:3015-3047
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Frauenheim Thomas,Seifert Gotthard,Elstner Marcus,Niehaus Thomas,Köhler Christof,Amkreutz Marc,Sternberg Michael,Hajnal Zoltán,Carlo Aldo Di,Suhai Sándor

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference128 articles.

1. Computer simulation of local order in condensed phases of silicon

2. New empirical model for the structural properties of silicon

3. New empirical approach for the structure and energy of covalent systems

4. Empirical potential for hydrocarbons for use in simulating the chemical vapor deposition of diamond films

5. CHARMM: A program for macromolecular energy, minimization, and dynamics calculations

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