Electronic Structure of the Silicon Vacancy Color Center in Diamond-Reference-Cited by-同舟云学术

Electronic Structure of the Silicon Vacancy Color Center in Diamond

Published:2014-01-24 Issue:3 Volume:112 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Hepp Christian,Müller Tina,Waselowski Victor,Becker Jonas N.,Pingault Benjamin,Sternschulte Hadwig,Steinmüller-Nethl Doris,Gali Adam,Maze Jeronimo R.,Atatüre Mete,Becher Christoph

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.112.036405/fulltext

Reference19 articles.

1. Silicon defects in diamond

2. Uniaxial stress and Zeeman splitting of the 1.681 eV optical center in a homoepitaxial CVD diamond film

3. Low-temperature investigations of single silicon vacancy colour centres in diamond

4. Properties of nitrogen-vacancy centers in diamond: the group theoretic approach

5. Electronic structure of neutral silicon-vacancy complex in diamond

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