AsGa-XIcomplexes as models for theEL2 center in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.1667/fulltext
Reference27 articles.
1. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
2. Metastability of the Isolated Arsenic-Antisite Defect in GaAs
3. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
4. Stress splitting of theA1→T2transition ofAsGa: Implied absence ofAsiin the structure ofEL2
5. Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to theEL2 defect
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1. Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers;Journal of Applied Physics;2011-12-15
2. Simple intrinsic defects in gallium arsenide;Modelling and Simulation in Materials Science and Engineering;2009-11-23
3. EL2-like defects in InP nanowires: Anab initiototal energy investigation;Physical Review B;2007-04-26
4. Effect of the vacancy composition of GaAs single crystals on optical quenching of luminescence through EL2 defects;Crystallography Reports;2005-07
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