EL2-like defects in InP nanowires: Anab initiototal energy investigation
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.165324/fulltext
Reference30 articles.
1. Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect
2. Identification of a defect in a semiconductor:EL2 in GaAs
3. “EL2” revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs
4. Metastability of the Isolated Arsenic-Antisite Defect in GaAs
5. Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation ofEL2?
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1. Defect formation in InSb nanowires and its effect on stoichiometry and carrier transport;Journal of Nanoparticle Research;2013-11-30
2. Tailoring Electronic Transparency of Twin-Plane 1D Superlattices;ACS Nano;2011-06-23
3. First-Principles Study of Initial Growth of InP Nanowires: Self-Catalytic Effect and Nucleation Mechanism of In Adatoms;The Journal of Physical Chemistry C;2010-05-17
4. Thermodynamic phase diagram for hydrogen on polar InP(111)B surfaces;Journal of Applied Physics;2010-03-15
5. Structural properties of narrow hexagonal MnAs nanowires: Role of edge atoms;Physical Review B;2009-05-18
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