Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects-Reference-Cited by-同舟云学术

Infrared photocarrier radiometry of semiconductors: Physical principles, quantitative depth profilometry, and scanning imaging of deep subsurface electronic defects

Published:2003-05-21 Issue:20 Volume:67 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Mandelis Andreas,Batista Jerias,Shaughnessy Derrick

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.205208/fulltext

Reference27 articles.

1. Highly resolved separation of carrier‐ and thermal‐wave contributions to photothermal signals from Cr‐doped silicon using rate‐window infrared radiometry

2. Non‐contacting measurements of photocarrier lifetimes in bulk‐ and polycrystalline thin‐film Si photoconductive devices by photothermal radiometry

3. Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing

4. Theoretical and experimental aspects of three-dimensional infrared photothermal radiometry of semiconductors

5. Computational Aspects of Laser Radiometric Multiparameter Fit for Carrier Transport Property Measurements in Si Wafers

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