Photothermal radiometric investigation of implanted silicon: The influence of dose and thermal annealing

Author:

Othonos Andreas,Christofides Constantinos,Mandelis Andreas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference19 articles.

Cited by 31 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photothermoelastic interaction in a two-dimensional semiconductor with nonlocal stress theory;International Journal for Computational Methods in Engineering Science and Mechanics;2024-04-22

2. Influence of the Doping Level of Silicon on its Optical and Recombination Parameters Measured with the Nondestructive Photothermal Radiometry Method;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

3. Possibilities of the Investigations of the Thermal Parameters of the Polybutyl Methacrylate Siloxane Coatings with the Use of the Photothermal Radiometry;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07

4. Photo-thermoelastic inter action in a semiconductor with cylindrical cavity due to memory-effect;Mechanics of Time-Dependent Materials;2023-09-13

5. A numerical study of the effect of thermal relaxation on the photothermal signal from semiconductors;THE 5TH INTERNATIONAL CONFERENCE ON COMPUTATIONAL INTELLIGENCE IN INFORMATION SYSTEMS (CIIS 2022): Intelligent and Resilient Digital Innovations for Sustainable Living;2023

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