Current characteristics of the double-barrierAl0.25Ga0.75As/Al0.45Ga0.55As/GaAs single-quantum-well structures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.5202/fulltext
Reference31 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors
3. Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
4. Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−xbarriers
5. 19 μm cutoff long‐wavelength GaAs/AlxGa1−xAs quantum‐well infrared photodetectors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Applying the Dirac equation to derive the transfer matrix for piecewise constant potentials;Physics Letters A;2007-07
2. Comparison of resonant tunneling in AlGaAs/GaAs parabolic and diffusion modified quantum wells;Pramana;2003-07
3. Transport mechanism of Γ- andX-band electrons inAlxGa1−xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors;Physical Review B;1996-07-15
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