Transport mechanism of Γ- andX-band electrons inAlxGa1−xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2059/fulltext
Reference44 articles.
1. Quantum‐well infrared photodetectors
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3. Influences of MBE growth processes on photovoltaic 3-5 /spl mu/m intersubband photodetectors
4. Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wells
5. Electronic band structure ofAlxGa1−xAs/AlyGa1−yAs/GaAs double-barrier superlattices
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