Controlling the error mechanism in a tunable-barrier nonadiabatic charge pump by dynamic gate compensation
Author:
Funder
European Metrology Programme for Innovation and Research
Deutsche Forschungsgemeinschaft
Latvijas Zinātnes Padome
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.205425/fulltext
Reference43 articles.
1. Quantized current in a quantum-dot turnstile using oscillating tunnel barriers
2. Electron pump by a combined single-electron/field-effect- transistor structure
3. Non-adiabatic quantized charge pumping with tunable-barrier quantum dots: a review of current progress
4. Robustness of single-electron pumps at sub-ppm current accuracy level
5. Evidence for universality of tunable-barrier electron pumps
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1. Advances toward high-accuracy operation of tunable-barrier single-hole pumps in silicon;Journal of Applied Physics;2024-01-05
2. Multiple electron pumping;EPJ Quantum Technology;2023-10-31
3. Suppression of Back-Tunneling Events in Hybrid Single-Electron Turnstiles by Source-Drain Bias Modulation;Physical Review Applied;2023-04-27
4. Controlling the error mechanism in a tunable-barrier nonadiabatic charge pump by dynamic gate compensation;Physical Review B;2022-05-20
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