Systematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO3/Pt ferroelectic tunnel junctions-Reference-Cited by-同舟云学术

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Systematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO3/Pt ferroelectic tunnel junctions

Published:2012-02-09 Issue:6 Volume:85 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Shen Lei,Zhou Tiejun,Bai Zhaoqiang,Zeng Minggang,Goh Jing Qiang,Yuan Zhi-min,Han Guchang,Liu Bo,Feng Yuan Ping

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.85.064105/fulltext

Reference52 articles.

1. Resistive switching in transition metal oxides

2. The missing memristor found

3. Disorder Scattering in Magnetic Tunnel Junctions: Theory of Nonequilibrium Vertex Correction

4. Oxygen-Vacancy-Induced Diffusive Scattering inFe/MgO/FeMagnetic Tunnel Junctions

5. Physics of thin-film ferroelectric oxides

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1. Modulating Electrical Characteristics of ZnO Thin-Film Transistors by Scaling Down Gate Dielectric Thickness;IEEE Transactions on Electron Devices;2024-02

2. Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction;The Journal of Chemical Physics;2023-10-03

3. Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design;npj Computational Materials;2023-08-14

4. Electronic properties of barium titanate with metal dopants;International Conference on Optoelectronic Materials and Devices (ICOMD 2022);2023-03-09

5. Giant Tunneling Electroresistance Induced by Interfacial Doping in Pt/BaTiO3/Pt Ferroelectric Tunnel Junctions;Physical Review Applied;2022-04-01

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