Monte Carlo simulation of electron drift velocity in low-temperature-grown gallium arsenide in a Schottky-barrier model
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.52.5708/fulltext
Reference22 articles.
1. Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures
2. Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniques
3. Prominent thermally stimulated current trap in low‐temperature‐grown molecular beam epitaxial GaAs
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