Percolation description of charge transport in amorphous oxide semiconductors
Author:
Funder
Deutsche Forschungsgemeinschaft
Russian Academy of Sciences
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.125202/fulltext
Reference36 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model
3. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
4. Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors
5. Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique
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