Electron transport in laterally confined phosphorusδlayers in silicon-Reference-Cited by-同舟云学术

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Electron transport in laterally confined phosphorusδlayers in silicon

Published:2006-10-24 Issue:15 Volume:74 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Robinson S. J.,Kline J. S.,Wheelwright H. J.,Tucker J. R.,Yang C. L.,Du R. R.,Volland B. E.,Rangelow I. W.,Shen T.-C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.153311/fulltext

Reference29 articles.

1. The theory of impurity conduction

2. Disordered electronic systems

3. Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures

4. One-Dimensional Electron-Electron Scattering with Small Energy Transfers

5. Dephasing of electrons in mesoscopic metal wires

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determining the quantum-coherent to semiclassical transition in atomic-scale quasi-one-dimensional metals;Physical Review B;2016-08-29

2. Electronic structure of two interacting phosphorusδ-doped layers in silicon;Physical Review B;2013-01-11

3. Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport;Nano Letters;2012-09-04

4. Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K;Journal of Applied Physics;2011-07

5. Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects;Nanotechnology;2011-01-07

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