Magnetic-field dependence of valley splitting in Si quantum wells grown on tilted SiGe substrates
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.74.245302/fulltext
Reference20 articles.
1. A silicon-based nuclear spin quantum computer
2. Valley splitting in strained silicon quantum wells
3. Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models
4. Valley splitting ofSi∕Si1−xGexheterostructures in tilted magnetic fields
5. Intervalley Gap Anomaly of Two-Dimensional Electrons in Silicon
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1. The critical role of substrate disorder in valley splitting in Si quantum wells;Applied Physics Letters;2018-06-11
2. Intervalley coupling for interface-bound electrons in silicon: An effective mass study;Physical Review B;2011-10-27
3. Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots;Physical Review B;2011-05-13
4. Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures;Physical Review B;2010-05-10
5. Valley splitting in a Si/SiGe quantum point contact;New Journal of Physics;2010-03-24
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