Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots-Reference-Cited by-同舟云学术

Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots

Published:2002-05-07 Issue:19 Volume:65 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Bayer M.,Ortner G.,Stern O.,Kuther A.,Gorbunov A. A.,Forchel A.,Hawrylak P.,Fafard S.,Hinzer K.,Reinecke T. L.,Walck S. N.,Reithmaier J. P.,Klopf F.,Schäfer F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.195315/fulltext

Reference110 articles.

1. Photoluminescence from a single GaAs/AlGaAs quantum dot

2. Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

3. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs

4. Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures

5. Ultranarrow Luminescence Lines from Single Quantum Dots

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