High-pressure photoluminescence study of GaAs/GaAs1−xPxstrained multiple quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.47.3765/fulltext
Reference35 articles.
1. Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition
2. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters
3. Very-high-performance highly strained Ga/sub 0.23/In/sub 0.77/As channel MODFETs
4. Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5
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