Strong interband interaction in the excitonic insulator phase of Ta2NiSe5-Reference-Cited by-同舟云学术

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Strong interband interaction in the excitonic insulator phase of Ta2NiSe5

Published:2019-02-06 Issue:7 Volume:99 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lee Jinwon,Kang Chang-Jong,Eom Man Jin,Kim Jun Sung,Min Byung Il,Yeom Han Woong

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology Information

Semiconductor Research Corporation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.075408/fulltext

Reference56 articles.

1. Metal-insulator transitions

2. Excitonic Insulator

3. Possible Anomalies at a Semimetal-Semiconductor Transistion

4. Possibility of an excitonic insulator at the semiconductor-semimetal transition

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Doping and Dual Nature of the Band Gap in Excitonic Insulator Ta₂NiSe₅;ACS Nano;2024-08-23

2. Defect-mediated structural phase transition in Ta2NiSe5 visualized via in situ TEM;Materials Characterization;2024-08

3. Photonic time-crystalline behaviour mediated by phonon squeezing in Ta2NiSe5;Nature Communications;2024-04-29

4. Terahertz parametric amplification as a reporter of exciton condensate dynamics;Nature Materials;2024-01-03

5. Multiple coherent amplitude modes and exciton–phonon coupling in quasi-one-dimensional excitonic insulator Ta₂NiSe₅;Physical Chemistry Chemical Physics;2024

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