Surface Doping and Dual Nature of the Band Gap in Excitonic Insulator Ta<sub>2</sub>NiSe<sub>5</sub>-Reference-Cited by-同舟云学术

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Surface Doping and Dual Nature of the Band Gap in Excitonic Insulator Ta₂NiSe₅

Published:2024-08-23 Issue:36 Volume:18 Page:24784-24791
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Lee Siwon¹²,Jin Kyung-Hwan¹³^ORCID,Jung Hyunjin¹²,Fukutani Keisuke¹,Lee Jinwon¹²⁴^ORCID,Kwon Chang Il¹²,Kim Jun Sung¹²,Kim Jaeyoung¹^ORCID,Yeom Han Woong¹²^ORCID

Affiliation:

1. Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea

2. Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea

3. Department of Physics and Research Institute of Physics and Chemistry, Jeonbuk National University, Jeonju 54896, Republic of Korea

4. Department of Quantum Nanoscience, Kavli Institute of Nanoscience, Delft University of Technology, Delft 2628 CJ, The Netherlands

Funder

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.4c02784

Reference54 articles.

1. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

2. Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed

3. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

4. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions

5. Monolayer excitonic laser

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