Electronic properties of a (Cu-Li)-related neutral complex defect with a bound exciton at 2.25 eV in GaP-Reference-Cited by-同舟云学术

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Electronic properties of a (Cu-Li)-related neutral complex defect with a bound exciton at 2.25 eV in GaP

Published:1987-11-15 Issue:15 Volume:36 Page:7948-7954
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Chen W. M.,Monemar B.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.7948/fulltext

Reference32 articles.

1. Excited states of excitons bound to nitrogen pairs in GaP

2. Optical properties of the Cu-related characteristic-orange-luminescence center in GaP

3. ODMR excitation spectroscopy in GaP

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-resolved zero-field optically detected magnetic-resonance study of the (Cu-Li)Vneutral defect complex in GaP;Physical Review B;1990-07-15

2. Transient characteristics of excitons bound at hole-attractive isoelectronic centers in GaP;Physical Review B;1989-12-15

3. Triplet bound excitons in copper-doped gallium phosphide;Applied Physics A Solids and Surfaces;1989-01

4. Neutral Bound Excitons at Intermediate to High Magnetic Fields;High Magnetic Fields in Semiconductor Physics II;1989

5. Binding Energies of Neutral Bound Excitons for Intermediate to High Magnetic Fields;physica status solidi (b);1988-11-01

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