Transient characteristics of excitons bound at hole-attractive isoelectronic centers in GaP
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.12280/fulltext
Reference22 articles.
1. Optical properties of the Cu-related characteristic-orange-luminescence center in GaP
2. Thermal behaviour of the Cu-related 2.177 eV bound exciton in GaP
3. Photoluminescence studies of the 1.911-eV Cu-related complex in GaP
4. Optically detected magnetic resonance studies of the 1.911-eV Cu-related complex in GaP
5. Optical properties of a neutral Cu-C complex defect in GaP
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