Atomic scale annealing effects on InxGa1−xNyAs1−ystudied by TEM three-beam imaging-Reference-Cited by-同舟云学术

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Atomic scale annealing effects on InxGa1−xNyAs1−ystudied by TEM three-beam imaging

Published:2011-07-18 Issue:4 Volume:84 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Müller Knut,Schowalter Marco,Rosenauer Andreas,Hu Dongzhi,Schaadt Daniel M.,Hetterich Michael,Gilet Philippe,Rubel Oleg,Fritz Rafael,Volz Kerstin

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.84.045316/fulltext

Reference34 articles.

1. Gas-source MBE of GaInNAs for long-wavelength laser diodes

2. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content

3. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

4. Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

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2. Clustering in ZnBVI-rich SrxZn1−xOyBVI1−y (BVI = S, Se, Te) highly mismatched alloys;Physica E: Low-dimensional Systems and Nanostructures;2020-04

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4. Cathodoluminescence Characterization of Dilute Nitride GaNSbAs Alloys;Journal of Electronic Materials;2018-05-30

5. Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys;Journal of Applied Physics;2018-04-28

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