Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing-Reference-Cited by-同舟云学术

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Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing

Published:2007-03 Issue:10 Volume:515 Page:4344-4347
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Djie H.S.,Wang D.-N.,Ooi B.S.,Hwang J.C.M.,Fang X.-M.,Wu Y.,Fastenau J.M.,Liu W.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Quantum Dot Heterostructures;Bimberg,1998

2. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$

3. Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection

4. 1.3 μm room-temperature GaAs-based quantum-dot laser

5. Tuning self-assembled InAs quantum dots by rapid thermal annealing

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1. Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots;Journal of Semiconductors;2020-12-01

2. Effects of RTA on Quaternary Capped QDIP Characteristics;Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors;2017-09-07

3. Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer;Thin Solid Films;2014-02

4. A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping;Materials Research Bulletin;2012-11

5. TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells;Journal of Physics: Conference Series;2011-11-09

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