TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/326/i=1/a=012026/pdf
Reference9 articles.
1. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
2. Emission wavelength trimming of self-assembled InGaAs/GaAs quantum dots with GaAs/AlGaAs superlattices by rapid thermal annealing
3. Diffusion at the interfaces of InGaNAs/GaAs quantum wells
4. Growth and annealing of GaInAsN: density-functional calculations on the reactions of surface and bulk structures
5. Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells
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1. Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide;Nanomaterials;2019-06-08
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