1/f noise in δ-doped GaAs analyzed in terms of mobility fluctuations
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.55.5290/fulltext
Reference26 articles.
1. Experimental studies on 1/f noise
2. 1/f noise sources
3. Intersubband‐coupling and screening effects on the electron transport in a quasi‐two‐dimensional δ‐doped semiconductor system
4. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K
5. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
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