Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices-Reference-Cited by-同舟云学术

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Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices

Published:2020-04-09 Issue:15 Volume:101 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

King Cameron^ORCID,Schoenfield Joshua S.,Calderón M. J.^ORCID,Koiller Belita,Saraiva André,Hu Xuedong,Jiang HongWen^ORCID,Friesen Mark^ORCID,Coppersmith S. N.^ORCID

Funder

Army Research Office

National Science Foundation

U.S. Department of Defense

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Office of Naval Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.155411/fulltext

Reference34 articles.

1. Quantum computation with quantum dots

2. Silicon quantum electronics

3. Electron spin coherence exceeding seconds in high-purity silicon

4. An addressable quantum dot qubit with fault-tolerant control-fidelity

5. A two-qubit logic gate in silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interacting two-level systems as a source of 1/f charge noise in quantum dot qubits;Physical Review B;2023-11-20

2. Robust technology computer-aided design of gated quantum dots at cryogenic temperature;Applied Physics Letters;2022-06-27

3. Charge-Noise Resilience of Two-Electron Quantum Dots in Si/SiGe Heterostructures;Physical Review Letters;2022-06-16

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