Role of two- and three-dimensional surface structures in InAs-GaAs(001) quantum dot nucleation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.121307/fulltext
Reference20 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs
3. In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)
4. Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation
5. Crystallographic texture and interface structure in Co/Cu multilayer films
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1. Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures;AIP Advances;2021-07-01
2. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation;Journal of Applied Physics;2020-02-14
3. Laser induced nano-patterning with atomic-scale thickness on an InAs/GaAs surface;Semiconductor Science and Technology;2018-10-19
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