Effect of interface states on spin-dependent tunneling inFe∕MgO∕Fetunnel junctions
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.140404/fulltext
Reference36 articles.
1. Spin-polarized electron tunneling
2. Spin-dependent tunnelling in magnetic tunnel junctions
3. Band structure, evanescent states, and transport in spin tunnel junctions
4. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
5. 70% TMR at Room Temperature for SDT Sandwich Junctions With CoFeB as Free and Reference Layers
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