Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB-Reference-Cited by-同舟云学术

Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB

Published:2024-03 Issue:3 Volume:60 Page:1-6
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Huang Puyang¹^ORCID,Chen Aitian²^ORCID,Dong Jianting³,Wu Di⁴,Liu Xinqi⁵,Zhi Zhenghang¹,Liu Jiuming¹,Lee Albert⁴,Fang Bin²,Zhang Jia³,Zhang Xi-Xiang²^ORCID,Kou Xufeng¹^ORCID

Affiliation:

1. School of Information Science and Technology, ShanghaiTech University, Shanghai, China

2. Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia

3. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, China

4. Suzhou Inston Technology Company Ltd., Suzhou, China

5. ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Major Project of Shanghai Municipal Science and Technology

Shanghai Engineering Research Center of Energy Efficient and Custom AI IC

ShanghaiTech Quantum Device and Soft Matter Nano-fabrication Labs

King Abdullah University of Science and Technology (KAUST) through the KAUST Office of Sponsored Research

Shanghai Rising-Star Program and the Open Fund of the State Key Laboratory of Infrared Physics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/20/10449956/10400492.pdf?arnumber=10400492

Reference41 articles.

1. Two-dimensional materials prospects for non-volatile spintronic memories

2. Opportunities and challenges for spintronics in the microelectronics industry

3. NVSim: A Circuit-Level Performance, Energy, and Area Model for Emerging Nonvolatile Memory

4. Magnetic Tunnel Junctions for Spintronic Memories and Beyond

5. Magnetoresistive Random Access Memory