Oxidation rate and surface-potential variations of silicon during plasma oxidation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.3993/fulltext
Reference42 articles.
1. Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
2. Very thin oxide film on a silicon surface by ultraclean oxidation
3. Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma
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