Determination of the conduction-band structure of InSb subject to mechanical strain from measurements of the reflectivity spectrum
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.18.6978/fulltext
Reference24 articles.
1. Determination of the conduction-band structure of the III-V semiconductors subject to mechanical strain from measurements of the reflectivity spectrum
2. Effect of deformation on the conduction band of III-V semiconductors
3. Interband Magneto-Absorption and Faraday Rotation in InSb
4. Elastic Moduli of Indium Antimonide
5. Band structure of indium antimonide
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Determination of the Deformation Potential Constant of the Conduction Band in InSb by the Electron Mobility in the Intrinsic Range;Japanese Journal of Applied Physics;1991-02-15
2. The effect of uniaxial stress on the persistent photoconductivity in Te-doped AlxGa1−xAs;Canadian Journal of Physics;1987-05-01
3. Hot-electron galvanomagnetic conduction inn-InSb at 77 K;Physical Review B;1985-04-15
4. High electric-field hall effect measurements onn-type InSb at 77 K;Applied Physics A Solids and Surfaces;1982-02
5. Determination of the conduction-band structure of the III-V semiconductors subject to mechanical strain from measurements of the reflectivity spectrum;Physical Review B;1978-12-15
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