The effect of uniaxial stress on the persistent photoconductivity in Te-doped AlxGa1−xAs

Abstract

Persistent photoconductivity in Te-doped AlxGa1−xAs is measured. It is found that the photoconductivity rise is a phonon-assisted process. The photoconductivity decay time increases with the application of stress. From the dependence of conductivity on stress, the donor-level deformation potential is determined to be approximately 2 meV∙kbar−1 (1 bar = 100 kPa). Some evidence is presented that suggests that more than one DX-type level is required to explain the features of the persistent photoconductivity.