Nonequilibrium point defects and dopant diffusion in carbon-rich silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.073202/fulltext
Reference18 articles.
1. Carbon incorporation in silicon for suppressing interstitial‐enhanced boron diffusion
2. Suppressed diffusion of boron and carbon in carbon-rich silicon
3. Carbon diffusion in silicon
4. Sn-Background-Induced Diffusion Enhancement of Sb in Si
5. Diffusion in strained Si(Ge)
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