Optical properties of silicon and germanium determined by high-precision analysis of reflection electron energy loss spectroscopy spectra-Reference-Cited by-同舟云学术

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Optical properties of silicon and germanium determined by high-precision analysis of reflection electron energy loss spectroscopy spectra

Published:2019-12-30 Issue:24 Volume:100 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Yang L. H.,Tőkési K.^ORCID,Tóth J.,Da B.,Li H. M.,Ding Z. J.

Funder

National Natural Science Foundation of China

Ministry of Education of the People's Republic of China

Nemzeti Kutatási Fejlesztési és Innovációs Hivatal

Japan Science and Technology Agency

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.100.245209/fulltext

Reference72 articles.

1. High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

2. An electronic silicon-based memristor with a high switching uniformity

3. Si-based materials and devices for light emission in silicon

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