Use of surface Brillouin scattering to examine a structural phase transition in carbon-ion-bombarded silicon during high-temperature annealing
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.012106/fulltext
Reference13 articles.
1. Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in Si
2. Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ions
3. Characteristics of the synthesis of β-SiC by the implantation of carbon ions into silicon
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5. Investigation of structure and phase transformations in silicon implanted with 12C+ at room temperature
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1. Thermally induced amorphous to crystalline transformation of argon ion bombarded GaAs studied with surface Brillouin and Raman scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
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3. Growth of ZnO thin film on SiO2/Si substrate by pulsed laser deposition and study of their physical properties;Materials Letters;2006-02
4. Brillouin Scattering Measurement of SAW Velocities for Determining Near-Surface Elastic Properties;Ultrasonic Nondestructive Evaluation;2003-12-29
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