Carbon bonding site inSi(001)c(4×4)prepared by hydrocarbon decomposition
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.233306/fulltext
Reference26 articles.
1. Novel Pathway to the Growth of Diamond on Cubicβ-SiC(001)
2. Direct Local Epitaxy of Diamond on Si(100) and Surface-Roughening-Induced Crystal Misorientation
3. Ab initioStudy of Misfit Dislocations at theSiC/Si(001)Interface
4. Local lattice distortion inSi1−x−yGexCyepitaxial layers from x-ray absorption fine structure
5. New features of the Si()-c(4×4) reconstruction observed with STM: suggestion of the structure with lowered symmetry
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