Green’s-function formalism of electronic states in heavily doped semiconductors and its application to a problem of inter-valence-band absorption
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.32.8066/fulltext
Reference13 articles.
1. Intervalence-Band Absorption in Relation to Auger Recombination in Laser Materials
2. Theory of phonon-assisted Auger recombination in semiconductors
3. Unified theory of the impurity and phonon scattering effects on Auger recombination in semiconductors
4. Effects of impurity-band tails on Auger recombination in semiconductors
5. Semiempirical pseudopotential approach to Green's-function formalism of electronic states in heavily doped semiconductors
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy;Physical Review B;2013-11-11
2. Theory of band tails in heavily doped semiconductors;Reviews of Modern Physics;1992-07-01
3. Quantum theory of electronic properties in doped semiconductors by an extension of the method of the bent-band theory;Physical Review B;1989-08-15
4. Comment on ‘‘Carrier concentration and activation energy in heavily donor‐doped silicon’’ [J. Appl. Phys.61, 591 (1987)];Journal of Applied Physics;1988-07-15
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