Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.245314/fulltext
Reference55 articles.
1. XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors
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3. Note on the potential of ionized impurities in semiconductors
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