Atomic-scale Monte Carlo study of step-flow growth modes onGaAs(001)−(2×4)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.125301/fulltext
Reference62 articles.
1. A Monte Carlo simulation study on the structural change of the GaAs(001) surface during MBE growth
2. A Theoretical Investigation of Migration Potentials of Ga Adatoms near Kink and Step Edges on GaAs(001)- (2× 4) Surface
3. Ga-adatom-induced As rearrangement during GaAs epitaxial growth: Self-surfactant effect
4. A Theoretical Investigation of Migration Potentials of Ga Adatoms near Step Edges on $\bf GaAs(001)\mbox{-}\mbi{c}(4\times 4)$ Surface
5. Electron Counting Monte Carlo Simulation of the Structural Change of the GaAs(001)- c (4× 4) Surface during Ga Predeposition
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3. Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED and STM;Journal of Crystal Growth;2012-02
4. Structure transition between two GaAs(001)-c(4×4) surface reconstructions in As4 flux;Journal of Crystal Growth;2007-04
5. Atomic-scale Monte Carlo study of GaAs( 001 )-(2 × 4) growth on vicinal surfaces;Surface Science;2001-11
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