Structure transition between two GaAs(001)-c(4×4) surface reconstructions in As4 flux
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
2. Scanning tunneling microscopy study of GaAs(001) surfaces
3. Atomic Structure of theGaAs(001)−c(4×4)Surface: First-Principles Evidence For Diversity of Heterodimer Motifs
4. The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces
5. LEED structural analysis of GaAs(001)-c(4×4) surface
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1. Field - dipole interactions in L-cysteine-thiolate self assembled at p- and n-GaAs(100) electrodes;Electrochimica Acta;2015-09
2. Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)–c(4×4)α surfaces;Surface Science;2014-07
3. STM observation of MnAs initial growth surface on GaAs(001)-c(4×4)α and 6×6 reconstructions;Journal of Crystal Growth;2013-09
4. Systematic approach for determination of equilibrium atomic surface structure;Physical Review B;2010-10-20
5. Surface structure and magnetic properties of MnAs epilayers grown on vicinal GaAs(001) substrates;Journal of Applied Physics;2009-12
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