Many-electron treatment of the off-center substitutional O in Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.4432/fulltext
Reference13 articles.
1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
2. Theoretical Study of the Si-A Centre
3. Electronic structure of substitutional chalcogen impurities in silicon
4. Theory of off-center impurities in silicon: Substitutional nitrogen and oxygen
5. Electronic structure of oxygen in silicon
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