Electronic structure of oxygen in silicon
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference18 articles.
1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center;Watkins;Phys. Rev.,1961
2. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-A Center;Corbett;Phys. Rev.,1961
3. Paramagnetic Resonance in Electron Irradiated Silicon;Bemski;J. Appl. Phys.,1959
4. Photoconductivity Studies of Radiation - Induced Defects in Silicon;Young;Phys. Rev. B,1972
5. Theoretical Study of the Si-A Centre;Caldas;Phys. Stat. Sol. (b),1980
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1. Electronic structure of Al, P, S, and Cl impurities in silicon;International Journal of Quantum Chemistry;1998-12-06
2. Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon;Physical Review B;1992-05-15
3. Oxygen-vacancy complex in silicon. I.Si29electron-nuclear double resonance;Physical Review B;1989-08-15
4. Microscopic models for Cu, Ag and Au cationic substitutional impurities and the metal vacancy in ZnSe;Solid State Communications;1986-11
5. Many-electron treatment of the off-center substitutional O in Si;Physical Review B;1986-03-15
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